SILICON EPITAXIAL

NPN TRANSISTOR

BC109CSM

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8123

Issue 2

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

VCB = 20V

15

nA

ICBO

Collector-Cut-Off Current

TA = 150°C

15

µA

V(BR)CBO

Collector-Base Breakdown

Voltage

IC = 10µA

30

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 10mA

20

V(BR)EBO

Emitter-Base Breakdown

Voltage

IE = 10µA

5

V

IC = 2mA

VCE = 5V

550

700

VBE

(1)

Base-Emitter Voltage

IC = 10mA

VCE = 5V

700

IC = 10mA

IB = 0.5mA

250

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

IC = 100mA

IB = 5mA

600

IC = 10mA

IB = 0.5mA

750

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 100mA

IB = 5mA

900

mV

hFE

(1)

IC = 2mA

VCE = 5V

200

800

Forward-current transfer

ratio

IC = 10µA

VCE = 5V

40

DYNAMIC CHARACTERISTICS

IC = 10mA

VCE = 5V

fT

Transition Frequency

f = 100MHz

150

MHz

IC = 2mA

VCE = 5V

hfe

Small-Signal Current Gain

f = 1.0KHz

240

900

VCB = 10V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

6

pF

VEB = 0.5V

IC = 0

Cibo

Input Capacitance

f = 1.0MHz

12

pF

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%