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BFC52 Datasheet(PDF) 2 Page - Seme LAB

Part # BFC52
Description  4TH GENERATION MOSFET
PDF  2 Pages
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Manufacturer  SEME-LAB [Seme LAB]
Direct Link  http://www.semelab.co.uk
Logo SEME-LAB - Seme LAB

BFC52 Datasheet(HTML) 2 Page - Seme LAB

  BFC52 Datasheet HTML 1Page - Seme LAB BFC52 Datasheet HTML 2Page - Seme LAB  
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BFC52
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
9.5
38
1.3
108
216
432
1.2
2.5
5.0
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 4/94
IS
ISM
VSD
trr
Qrr
(Body Diode)
(Body Diode)
VGS = 0V , IS = – ID [Cont.]
IS = – ID [Cont.] , dls / dt = 100A/µs
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
A
V
ns
µC
Characteristic
Test Conditions
Min.
Typ.
Max. Unit
180
180
38
SOA1
SOA2
ILM
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
W
W
A
Characteristic
Min.
Typ.
Max. Unit
0.68
40
RθJC
RθJA
Junction to Case
Junction to Ambient
°C/W
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
SAFE OPERATING AREA CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8Ω
pF
nC
ns
740
950
167
234
63
94
33
55
5.6
8
16
24
10
20
14
28
35
48
11
22
LAB
SEME
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
VDS = 0.4VDSS , t = 1 Sec.
IDS = PD / 0.4VDSS
VDS = PD / ID [Cont.]
IDS = ID [Cont.] , t = 1 Sec.



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