SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8576

Issue 1

Page 1 of 3

BSS71

•

High Voltage

•

Hermetic TO-18 Metal package.

•

Ideally suited for High Voltage Amplifier

and Switching Applications

•

Screening Options Available

A = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage

200V

VCEO

Collector – Emitter Voltage

200V

VEBO

Emitter – Base Voltage

6V

IC

Continuous Collector Current

500mA

PD

Total Power Dissipation at

TA = 25°C

500mW

Derate Above 25°C

2.86mW/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJA

Thermal Resistance, Junction To Ambient

350

°C/W