BUR52 datasheet(1/2 Pages) SEME-LAB

Part #	BUR52

Description	HIGH CURRENT NPN SILICON

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	SEME-LAB [Seme LAB]

Direct Link	http://www.semelab.co.uk

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350V

250V

10V

60A

80A

16A

350W

-65°C to +200°C

200°C

0.5°C/W

BUR52

VCBO

Collector – Base Voltage (IE= 0V)

VCEO

Collector – Emitter Voltage (IB= 0V)

VEBO

Collector – Emitter Voltage (IC= 0V)

IC

Collector Current

ICM

Peak Collector Current (tp = 10 ms)

IB

Base Current

Ptot

Total Power Dissipation at Tcase ≤ 25°C

Tstg,

Storage Temperature

Tj

Max. Operating Junction Temperature

RθJC

Junction to Case Thermal Resistance

HIGH CURRENT

NPN SILICON

TRANSISTOR

FEATURES

• FAST SWITCHING

• HIGH PULSE POWER

ABSOLUTE MAXIMUM RATINGS (T

case = 25°C unless otherwise stated)

TO3 (TO204AE)

APPLICATIONS

• POWER SWITCHING CIRCUITS

• MOTOR CONTROL

MECHANICAL DATA

Dimensions in mm(inches)

Pin 1 = Base

Pin 2 = Emitter Case = Collector

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Document Number 5764

Issue 3

12

3

(case)

25.15 (0.99)

26.67 (1.05)

10.67 (0.42)

11.18 (0.44)

3.84 (0.151)

4.09 (0.161)

7.92 (0.312)

12.70 (0.50)

6.35 (0.25)

9.15 (0.36)

1.52 (0.06)

3.43 (0.135)

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