Parameter

Test Conditions

Min.

Typ.

Max.

Unit

400

0.46

0.300

0.400

2.0

4.0

6.0

25

250

+100

–100

2660

680

250

52

110

5.0

18

25

65

35

190

170

130

14

56

1.7

1200

250

Negligible

6.1

0.83

30

Reference to 25°C

f = 1MHz

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

Gate – Source Leakage Forward

Gate – Source Leakage Reverse

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Reverse Recovery Time

Forward Turn–On Time

V

V/°C

Ω

V

S

μA

nA

pF

nC

ns

A

V

ns

μC

nH

°C/W

STATIC ELECTRICAL RATINGS

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Thermal Resistance Junction – Case

Thermal Resistance Junction – Ambient (Typical socket mount)

PACKAGE CHARACTERISTICS

THERMAL CHARACTERISTICS

IRF350

2N6768

Document Number 6252

Issue 1

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.