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PD20015C Datasheet(PDF) 1 Page - STMicroelectronics |
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PD20015C Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  April 2009 Doc ID 14136 Rev 2 1/9 9 PD20015C RF power transistor, LdmoST family Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V ■ BeO free package ■ ESD protection ■ In compliance with the 2002/95/EC european directive Description The PD20015C is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD20015C’s superior linearity performance makes it an ideal solution for mobile application. Figure 1. Pin connection M243 Epoxy sealed 1. Drain 2. Gate 3. Source 1 3 2 www.st.com |
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