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STP45NF06 Datasheet(PDF) 5 Page - STMicroelectronics |
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STP45NF06 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() STB45NF06, STP45NF06 Electrical characteristics Doc ID 7433 Rev 5 5/15 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current 38 A ISDM (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Source-drain current (pulsed) 152 A VSD (2) 2. Pulse width limited by safe operating area. Forward on voltage ISD = 38 A, VGS=0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 34 A, di/dt = 100A/µs, VDD = 10 V, Tj = 150°C (see Figure 15) 65 150 5 ns nC A |
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