STPS40L15CT datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

STPS40L15CW/CT

3/5

1.0E-4

1.0E-3

1.0E-2

1.0E-1

1.0E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp (s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration (per diode).

02468

1E-1

1E+0

1E+1

1E+2

5E+2

IR(mA)

Tj=100°C

Tj=25°C

VR(V)

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values per diode).

0.1

1.0

5.0

VR(V)

C(nF)

F=1MHz

Tj=25°C

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.1

1.0

10.0

100.0

200.0

VFM(V)

IFM(A)

Tj=150°C

Tj=25°C

Tj=125°C

Tj=75°C

Fig. 9: Forward voltage drop versus forward

current (typical values per diode).

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

100

200

IFM(A)

Tj=100°C

VFM(V)

Fig. 10: Forward voltage drop versus forward

current (typical maximum per diode).

1E-3

1E-2

1E-1

1E+0

100

150

200

250

t(s)

IM(A)

Tc=50°C

Tc=75°C

Tc=110°C

δ=0.5

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values per

diode).

STPS40L15CT Datasheet(PDF) 3 Page - STMicroelectronics

STPS40L15CT Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5

Datasheet Download

Link URL