STPS10150CFP datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STPS10150C

2/9

Characteristics

When the diodes 1 and 2 are used simultaneously:

∆Tj(diode 1) = P(diode 1) x Rth(j-l)(Per diode) + P(diode 2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 0.65 x IF(AV) + 0.02 IF

(RMS)

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AB, D2PAK

Per diode

° C/W

TO-220FPAB

TO-220AB, D2PAK

Total

2.4

TO-220FPAB

5.3

Rth(c)

Coupling

TO-220AB, D2PAK

0.7

TO-220FPAB

3.7

Table 3.

Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

2.0

µA

Tj = 125° C

0.40

2.0

(2)

Forward voltage drop

Tj = 25° C

IF = 5 A

0.92

Tj = 125° C

0.69

0.75

Tj = 25° C

IF = 10 A

Tj = 125° C

0.79

0.85

tp = 5 ms, δ < 2%

tp = 380 µs, δ < 2%

Figure 1.

Average forward power

dissipation versus average

forward current (per diode)

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5, per

diode)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

I(A)

F(av)

P(W)

F(av)

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

δ=tp/T

0.0

1.0

2.0

3.0

4.0

5.0

6.0

100

125

150

175

th(j-a)=15 °C/W

d=tp/T

th(j-a)=Rth(j-c)

TO-220FPAB

TO-220AB/D²PAK

(°C)

amb

(A)

F(av)

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