2SA1432

2009-12-21

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1432

High Voltage Control Applications

Plasma Display, Nixie Tube Driver Applications

Cathode Ray Tube Brightness Control Applications

• Complementary to 2SC3672

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−300

V

Collector-emitter voltage

−300

V

Emitter-base voltage

−8

V

Collector current

−100

mA

Base current

−20

mA

Collector power dissipation

1000

mW

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7D101A

Weight: 0.2 g (typ.)