2SC3072

2005-02-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC3072

Strobe Flash Applications

Medium Power Amplifier Applications

• High DC current gain

• Low collector saturation voltage

• High power dissipation

Characteristics

Symbol

Rating

Unit

Collector-base voltage

50

V

40

Collector-emitter voltage

20

V

Emitter-base voltage

8

V

DC

5

Collector current

Pulse

(Note 1)

8

A

Base current

0.5

A

Ta = 25°C

1.0

Collector power

dissipation

Tc = 25°C

10

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-7B1A

Weight: 0.36 g (typ.)

JEDEC

―

JEITA

―

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)