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2SC3138 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SC3138 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 5 page  2SC3138 2003-03-27 1 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Switching Applications · High voltage: VCBO = 200 V (max) VCEO = 200 V (max) · Small flat package · Complementary to 2SA1255 Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Marking Unit: mm JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) |
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