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2N7002 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # 2N7002
Description  N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  5 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

2N7002 Datasheet(HTML) 2 Page - Diodes Incorporated

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2N7002
Document number: DS11303 Rev. 24 - 2
2 of 5
www.diodes.com
November 2010
© Diodes Incorporated
2N7002
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS ≤ 1.0MΩ
VDGR
60
V
Gate-Source Voltage
Continuous
Pulsed
VGSS
±20
±40
V
Drain Current (Note 4)
Continuous
Continuous @ 100°C
Pulsed
ID
115
73
800
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
Derating above TA = 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient
RθJA
417
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BVDSS
60
70
⎯
V
VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current
@ TC = 25°C
@ TC = 125°C
IDSS
⎯
⎯
1.0
500
µA
VDS = 60V, VGS = 0V
Gate-Body Leakage
IGSS
⎯
⎯
±10
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
1.0
⎯
2.5
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
@ TJ = 25°C
@ TJ = 125°C
RDS (ON)
⎯
3.2
4.4
7.5
13.5
Ω
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current
ID(ON)
0.5
1.0
⎯
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
gFS
80
⎯
⎯
mS
VDS =10V, ID = 0.2A
Diode Forward Voltage (Note 6)
VSD
⎯
0.78
1.5
V
VGS = 0V, IS = 115mA
Continuous Source Current (Note 6)
IS
⎯
⎯
200
mA
⎯
Pulse Source Current (Note 6)
ISD
⎯
⎯
2
A
⎯
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
22
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
11
25
pF
Reverse Transfer Capacitance
Crss
⎯
2.0
5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
⎯
7.0
20
ns
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V,
RGEN = 25Ω
Turn-Off Delay Time
tD(OFF)
⎯
11
20
ns
Notes:
4. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
5. Short duration pulse test used to minimize self-heating effect.
6. VSD measured in 250μs pulse, duty cycle = 2%; ISD measure in 10ms Repetitive Pulse, duty cycle = 2% , Pd_Pulse is from Zth test data



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