MMBTA56 datasheet(1/3 Pages) DIODES

Part #	MMBTA56

Description	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 3 page

MMBTA55 / MMBTA56

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary NPN Types Available (MMBTA05 /

MMBTA06)

•

Ideal for Low Power Amplification and Switching

•

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 3 and 4)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020d

•

Terminal Connections: See Diagram

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over Alloy

42 leadframe).

•

MMBTA55 Marking (See Page 3): K2H, K2G

•

MMBTA56 Marking (See Page 3): K2G

•

Ordering Information: See Page 3

•

Weight: 0.008 grams (approximate)

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

α

0

°

8

°

All Dimensions in mm

A

E

J

L

TOP VIEW

M

B

C

BE

H

G

D

K

E

B

C

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

MMBTA55

MMBTA56

Unit

Collector-Base Voltage

VCBO

-60

-80

V

Collector-Emitter Voltage

VCEO

-60

-80

V

Emitter-Base Voltage

VEBO

-4.0

V

Collector Current - Continuous (Note 1)

IC

-500

mA

Power Dissipation (Note 1)

Pd

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

417

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

MMBTA55

MMBTA56

V(BR)CBO

-60

-80

⎯

V

IC = -100μA, IE = 0

Collector-Emitter Breakdown Voltage

MMBTA55

MMBTA56

V(BR)CEO

-60

-80

⎯

V

IC = -1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-4.0

⎯

V

IE = -100μA, IC = 0

Collector Cutoff Current

MMBTA55

MMBTA56

ICBO

⎯

-100

nA

VCB = -60V, IE = 0

VCB = -80V, IE = 0

Collector Cutoff Current

MMBTA55

MMBTA56

ICEX

⎯

-100

nA

VCE = -60V, IBO = 0V

VCE = -80V, IBO = 0V

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

100

⎯

IC = -10mA, VCE = -1.0V

IC = -100mA, VCE = -1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-0.25

V

IC = -100mA, IB = -10mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

-1.2

V

IC = -100mA, VCE = -1.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

50

⎯

MHz

VCE = -1.0V, IC = -100mA,

f = 100MHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead. Halogen and Antimony Free.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code

V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30054 Rev. 11 - 2

1 of 3

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