2N7002W datasheet(2/3 Pages) DIODES

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2N7002W

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 3)

Drain-Source Breakdown Voltage

BVDSS

⎯

VGS = 0V, ID = 10μA

Zero Gate Voltage Drain Current

@ TC = 25°C

@ TC = 125°C

IDSS

⎯

1.0

500

μA

VDS = 60V, VGS = 0V

Gate-Body Leakage

IGSS

⎯

±10

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(th)

1.0

⎯

2.0

VDS = VGS, ID = 250μA

VGS = 5.0V, ID = 0.05A

Static Drain-Source On-Resistance

@ TJ = 25°C

@ Tj = 125°C

RDS(ON)

⎯

1.8

2.6

7.5

13.5

VGS = 10V, ID = 0.5A

On-State Drain Current

ID(ON)

0.5

1.0

⎯

VGS = 10V, VDS = 7.5V

Forward Transconductance

gFS

⎯

VDS = 10V, ID = 0.2A

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

⎯

Output Capacitance

Coss

⎯

Reverse Transfer Capacitance

Crss

⎯

2.0

5.0

VDS = 25V, VGS = 0V

f = 1.0MHz

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

⎯

7.0

Turn-Off Delay Time

tD(OFF)

⎯

VDD = 30V, ID = 0.2A,

RL = 150Ω, VGEN = 10V,

RGEN = 25Ω

Notes:

3. Short duration pulse test used to minimize self-heating effect.

0.2

0.4

0.6

0.8

1.0

, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics

00.2

I , DRAIN CURRENT (A)

Fig. 2 On-Resistance vs. Drain Current

0.4

0.6

0.8

1.0

0.0

0.5

1.0

2.5

2.0

1.5

3.5

3.0

-55

-30

-5

120 145 170

T , JUNCTION TEMPERATURE ( C)

Fig. 3 On-Resistance vs. Junction Temperature

, GATE TO SOURCE VOLTAGE (V)

Fig. 4 On-Resistance vs. Gate-Source Voltage

1214

1618

2N7002W

Document number: DS30099 Rev. 14 - 2

2 of 3

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August 2008

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