MMBF170_08 datasheet(1/3 Pages) DIODES

Part #	MMBF170

Description	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 3 page

MMBT4124

Document number: DS30105 Rev. 11 - 2

1 of 3

www.diodes.com

January 2009

MMBT4124

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary PNP Type Available (MMBT4126)

•

Ideal for Medium Power Amplification and Switching

•

Lead, Halogen and Antimony Free, RoHS Compliant

•

"Green" Device (Notes 2 and 4)

Mechanical Data

•

Case: SOT-23

•

Case Material: Molded Plastic, “Green” Molding Compound,

Note 4. UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminal Connections: See Diagram

•

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating) Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.008 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current - Continuous (Note 1)

IC

200

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 1)

PD

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

417

°C/W

Operating and Storage and Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage

V(BR)CBO

30

⎯

V

IC = 10μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

25

⎯

V

IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

5.0

⎯

V

IE = 10μA, IC = 0

Collector Cutoff Current

ICBO

⎯

50

nA

VCB = 20V, IE = 0V

Emitter Cutoff Current

IEBO

⎯

50

nA

VEB = 3.0V, IC = 0V

ON CHARACTERISTICS (Note 3)

DC Current Gain

hFE

120

60

360

⎯

IC = 2.0mA, VCE = 1.0V

IC = 50mA, VCE = 1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.30

V

IC = 50mA, IB = 5.0mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

0.95

V

IC = 50mA, IB = 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

⎯

4.0

pF

VCB = 5.0V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo

⎯

8.0

pF

VEB = 0.5V, f = 1.0MHz, IC = 0

Small Signal Current Gain

hfe

120

480

⎯

VCE = 1.0V, IC = 2.0mA,

f = 1.0kHz

Current Gain-Bandwidth Product

fT

300

⎯

MHz

VCE = 20V, IC = 10mA,

f = 100MHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead. Halogen and Antimony Free.

3. Short duration pulse test used to minimize self-heating effect.

4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

Top View

Device Schematic

E

B

C

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