BSS84

Document number: DS30149 Rev. 14 - 2

2 of 4

www.diodes.com

February 2010

© Diodes Incorporated

BSS84

0

50

100

25

50

75

100

125

150

175

200

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Max Power Dissipation vs. Ambient Temperature

A

150

200

250

300

350

0

400

0

-600

-500

-400

-300

-200

-100

0-2

-1

-5

-4

-3

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 2 Drain-Source Current vs. Drain-Source Voltage

DS

0.0

-1.0

-0.8

-0.6

-0.4

-0.2

0-2

-3

-4

-1

-8

-7

-6

-5

V

, GATE-SOURCE VOLTAGE (V)

Fig. 3 Drain-Current vs. Gate-Source Voltage

GS

0

1

2

4

5

3

6

8

7

10

9

0

-1

-2

-3

-4

-5

V

, GATE-SOURCE (V)

Fig. 4 On-Resistance vs. Gate-Source Voltage

GS

T= 25 C

A

°

T = 125 C

A

°

0

3

6

9

12

15

-50

-25

0

25

50

125

100

75

150

T , JUNCTION TEMPERATURE (°C)

Fig. 5 On-Resistance vs. Junction Temperature

J

V

= -10V

I = -0.13A

GS

D

0.0

5.0

10.0

0.0

-0.2

-0.4

-0.6

-0.8

-1.0

I , DRAIN-CURRENT (A)

Fig. 6 On-Resistance vs. Drain-Current

D

15.0

20.0

25.0