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BAS40TW Datasheet(PDF) 1 Page - Diodes Incorporated |
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BAS40TW Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page ![]() BAS40TW /DW-04 /DW-05 /DW-06 /BR BAS40TW /DW-04 /DW-05 /DW-06 /BRW Document number: DS30156 Rev. 13 - 2 1 of 4 www.diodes.com July 2008 © Diodes Incorporated W SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS Features • Low Forward Voltage Drop • Fast Switching • Ultra-Small Surface Mount Package • PN Junction Guard Ring for Transient and ESD Protection • Lead Free/RoHS Compliant (Note 3) • Qualified to AEC-Q101 Standards for High Reliability • "Green" Device (Notes 4 and 5) Mechanical Data • Case: SOT-363 • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Solderable per MIL-STD-202, Method 208 • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). • Polarity: See Diagrams Below • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.006 grams (approximate) C 1 A 3 C 2 A 1 C 3 A 2 AC 1 AC 2 C 2 A 1 A 2 C 1 C 1 C 2 A 2 A 1 A 2 A 1 A 1 A 2 C 2 C 1 C 2 C 1 AC 1 AC 2 C 1 A 1 C 2 A 2 Top View BAS40TW BAS40DW-04 BAS40DW-05 BAS40DW-06 BAS40BRW Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V RMS Reverse Voltage VR(RMS) 28 V Forward Continuous Current (Note 1) IFM 200 mA Non-Repetitive Peak Forward Surge Current @ t < 1.0s IFSM 600 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) PD 200 mW Thermal Resistance Junction to Ambient Air (Note 1) RθJA 625 °C/W Operating Temperature Range TJ -55 to +125 °C Storage Temperature Range TSTG -65 to +125 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 2) V(BR)R 40 ⎯ V IR = 10μA Forward Voltage VF ⎯ 380 1000 mV mV IF = 1.0mA, tp < 300μs IF = 40mA, tp < 300μs Reverse Current (Note 2) IR ⎯ 200 nA VR = 30V Total Capacitance CT ⎯ 5.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ⎯ 5.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration pulse test used to minimize self-heating effect. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants Please click here to visit our online spice models database. |
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