MMDT4124 datasheet(1/3 Pages) DIODES

Part #	MMDT4124

Description	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 3 page

MMDT4124

Document number: DS30164 Rev. 10 - 2

1 of 3

www.diodes.com

January 2009

MMDT4124

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary PNP Type Available (MMDT4126)

•

Ideal for Medium Power Amplification and Switching

•

Ultra-Small Surface Mount Package

•

Lead Free/RoHS Compliant (Note 3)

•

Qualified to AEC-Q101 Standards for High Reliability

•

"Green" Device (Notes 5 and 6)

Mechanical Data

•

Case: SOT-363

•

Case Material: Molded Plastic, “Green” Molding Compound,

Note 6. UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating) Solderable per MIL-STD-202, Method 208

•

Terminal Connections: See Diagram

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.006 grams (approximate)

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current – Continuous

(Note 1)

IC

200

mA

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation

(Notes 1 & 2)

PD

200

mW

Thermal Resistance, Junction to Ambient

(Note 1)

RθJA

625

°C/W

Operating and Storage and Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(BR)CBO

30

⎯

V

IC = 10μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

25

⎯

V

IC = 1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

5.0

⎯

V

IE = 10μA, IC = 0

Collector Cutoff Current

ICBO

⎯

50

nA

VCB = 20V, IE = 0V

Emitter Cutoff Current

IEBO

⎯

50

nA

VEB = 3.0V, IC = 0V

ON CHARACTERISTICS (Note 4)

DC Current Gain

hFE

120

60

360

⎯

IC = 2.0mA, VCE = 1.0V

IC = 50mA, VCE = 1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.30

V

IC = 50mA, IB = 5.0mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

0.95

V

IC = 50mA, IB = 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

⎯

4.0

pF

VCB = 5.0V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo

⎯

8.0

pF

VEB = 0.5V, f = 1.0MHz, IC = 0

Small Signal Current Gain

hfe

120

480

⎯

VCE = 1.0V, IC = 2.0mA, f = 1.0kHz

Current Gain-Bandwidth Product

fT

300

⎯

MHz

VCE = 20V, IC = 10mA, f = 100MHz

Noise Figure

NF

⎯

5.0

dB

VCE = 5.0V, IC = 100μA,

RS = 1.0kΩ, f = 1.0kHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Maximum combined dissipation.

3. No purposefully added lead.

4. Short duration pulse test used to minimize self-heating effect.

5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

6. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

Top View

Device Schematic

C

2

B

1

E

1

E

2

B

2

C

1

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