MMST5401 datasheet(2/4 Pages) DIODES

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Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage

V(BR)CBO

-160

⎯

IC = -100μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

-150

⎯

IC = -1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-5.0

⎯

IE = -10μA, IC = 0

Collector Cutoff Current

ICBO

⎯

-50

μA

VCB = -120V, IE = 0

VCB = -120V, IE = 0, TA = 100°C

Emitter Cutoff Current

IEBO

⎯

-50

VEB = -3.0V, IC = 0

ON CHARACTERISTICS (Note 5)

DC Current Gain

hFE

⎯

240

⎯

IC = -1.0mA, VCE = -5.0V

IC = -10mA, VCE = -5.0V

IC = -50mA, VCE = -5.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

-0.2

-0.5

IC = -10mA, IB = -1.0mA

IC = -50mA, IB = -5.0mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

-1.0

IC = -10mA, IB = -1.0mA

IC = -50mA, IB = -5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

⎯

6.0

VCB = -10V, f = 1.0MHz, IE = 0

Small Signal Current Gain

hfe

200

⎯

VCE = -10V, IC = -1.0mA,

f = 1.0kHz

Current Gain-Bandwidth Product

100

300

MHz

VCE = -10V, IC = -10mA, f = 100MHz

Noise Figure

⎯

8.0

VCE = -5.0V, IC = -200μA,

RS = 10Ω, f = 1.0kHz

Notes:

5. Short duration pulse test used to minimize self-heating effect.

100

125

150

175

200

T , AMBIENT TEMPERATURE (°C)

Fig. 1, Max Power Dissipation vs.

Ambient Temperature

100

150

200

Note 1

0.01

0.1

1.0

10.0

100

1,000

I , COLLECTOR CURRENT (mA)

Fig. 2, Collector Emitter Saturation Voltage

vs. Collector Current

DS30170 Rev. 9 - 2

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