BC847AT datasheet(1/3 Pages) DIODES

Part #	BC847AT

Description	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

PDF	3 Pages

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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BC847AT, BT, CT

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Die Construction

•

Complementary PNP Types Available

(BC857AT,BT,CT)

•

Ultra-Small Surface Mount Package

•

Lead Free/RoHS Compliant (Note 2)

•

"Green" Device (Note 4 and 5)

Mechanical Data

DS30274 Rev. 9 - 2

1 of 3

www.diodes.com

BC847AT, BT, CT

•

Case: SOT-523

•

Case Material - Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over

Alloy 42 leadframe).

•

Terminal Connections: See Diagram

•

Marking Code: See Table

•

Ordering Information: See Page 2

•

Marking Information: See Page 2

•

Weight: 0.002 grams (approximate)

Type

Marking

BC847AT

1E

BC847BT

1F

BC847CT

1M

SOT-523

Dim

Min

Max

Typ

A

0.15

0.30

0.22

B

0.75

0.85

0.80

C

1.45

1.75

1.60

D

⎯

0.50

G

0.90

1.10

1.00

H

1.50

1.70

1.60

J

0.00

0.10

0.05

K

0.60

0.80

0.75

L

0.10

0.30

0.22

M

0.10

0.20

0.12

N

0.45

0.65

0.50

α

0

°

8

°

⎯

All Dimensi

mm

ons in

A

M

J

L

D

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

6.0

V

Collector Current

IC

100

mA

Power Dissipation (Note 1)

Pd

150

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

833

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

DC Current Gain

(Note 3)

Current Gain A

B

C

hFE

110

200

420

—

290

520

220

450

800

—

VCE = 5.0V, IC = 2.0mA

Collector-Emitter Saturation Voltage

(Note 3)

VCE(SAT)

—

250

600

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Saturation Voltage

(Note 3)

VBE(SAT)

—

700

900

—

mV

IC = 10mA, IB = 0.5mA

IC = 100mA, IB = 5.0mA

Base-Emitter Voltage

(Note 3)

VBE

580

—

660

—

700

770

mV

VCE = 5.0V, IC = 2.0mA

VCE =5.0V, IC = 10mA

Collector-Emitter Cutoff Current

(Note 3)

ICBO

—

15

5.0

nA

µA

VCB = 30V

VCB = 30V, TA = 150°C

Gain Bandwidth Product

fT

100

—

MHz

VCE = 5.0V, IC = 10mA,

f = 100MHz

Output Capacitance

COBO

—

4.5

pF

VCB = 10V, f = 1.0MHz

BC847BT

Noise Figure

BC847CT

NF

—

10

4.0

dB

VCE = 5V, RS = 2.0kΩ,

f = 1.0kHz, BW = 200Hz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Short duration pulse test used to minimize self-heating effect.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

B C

H

K

G

TOP VIEW

C

E

B

N

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