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BC847PN Datasheet(PDF) 2 Page - Diodes Incorporated |
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BC847PN Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 4 page  BC847PN Document number: DS30278 Rev. 12 - 2 2 of 4 www.diodes.com November 2008 © Diodes Incorporated BC847PN Electrical Characteristics, NPN Section @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 5) V(BR)CBO 50 — — V IC = 10μA, IB = 0 Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO 45 — — V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 5) V(BR)EBO 6 — — V IE = 1μA, IC = 0 DC Current Gain (Note 5) hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — 90 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Saturation Voltage (Note 5) VBE(SAT) — 700 900 — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA Base-Emitter Voltage (Note 5) VBE(ON) 580 — 660 — 700 720 mV VCE = 5.0V, IC = 2.0mA VCE =5.0V, IC = 10mA Collector-Cutoff Current (Note 5) ICBO ICBO — — — — 15 5.0 nA µA VCB = 30V VCB = 30V, TA = 150°C Gain Bandwidth Product fT 100 300 — MHz VCE = 5.0V, IC = 10mA, f = 100MHz Collector-Base Capacitance CCBO — 3.5 6.0 pF VCB = 10V, f = 1.0MHz Noise Figure NF — 2.0 10 dB VCE = 5V, IC = 200µA, RG = 2.0kΩ, f = 1.0kHz, Δf = 200Hz Electrical Characteristics, PNP Section @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 5) V(BR)CBO -50 — — V IC = -10μA, IB = 0 Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO -45 — — V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 5) V(BR)EBO -5 — — V IE = -1μA, IC = 0 DC Current Gain (Note 5) hFE 220 290 475 — VCE = -5.0V, IC = -2.0mA Collector-Emitter Saturation Voltage (Note 5) VCE(SAT) — -75 -250 -300 -650 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage (Note 5) VBE(SAT) — -700 -850 — -950 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage (Note 5) VBE(ON) -600 — -650 — -750 -820 mV VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA Collector-Cutoff Current (Note 5) ICBO ICBO — — — — -15 -4.0 nA µA VCB = -30V VCB = -30V, TA = 150°C Gain Bandwidth Product fT 100 200 — MHz VCE = -5.0V, IC = -10mA, f = 100MHz Collector-Base Capacitance CCBO — 3 4.5 pF VCB = -10V, f = 1.0MHz Noise Figure NF — — 10 dB VCE = -5V, IC = -200µA, RG = 2.0kΩ, f = 1.0kHz, Δf = 200Hz Notes: 5. Short duration pulse test used to minimize self-heating effect. 0 50 100 150 200 250 0 40 80 120 160 200 T , AMBIENT TEMPERATURE ( C) Fig. 1 Power Dissipation vs. Ambient Temperature (Total Device, Note 1) A ° R°C/W θJA = 625 1 10 100 1,000 1.0 10 100 0.1 0.01 I , COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current (NPN) C |
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