IMX8_2 datasheet(1/3 Pages) DIODES

Part #	IMX8

Description	DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 3 page

IMX8

DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary PNP Type Available (IMT4)

•

Small Surface Mount Package

•

Lead Free/RoHS Compliant (Note 3)

•

"Green" Device, Note 4 and 5

Mechanical Data

•

Case: SOT-26

•

Case Material: Molded Plastic, "Green" Molding

Compound, Note 5. UL Flammability Classification

Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminal Connections: See Diagram

•

Terminals: Solderable per MIL-STD-202, Method 208

•

Lead Free Plating (Matte Tin Finish annealed over

Copper leadframe).

•

Marking Information: KX8, See Page 3

•

Ordering & Date Code Information: See Page 3

•

Weight: 0.016 grams (approximate)

SOT-26

Dim

Min

Max

Typ

A

0.35

0.50

0.38

B

1.50

1.70

1.60

C

2.70

3.00

2.80

D

⎯

0.95

F

⎯

0.55

H

2.90

3.10

3.00

J

0.013

0.10

0.05

K

1.00

1.30

1.10

L

0.35

0.55

0.40

M

0.10

0.20

0.15

α

0

°

8

°

⎯

All Dimens ons in mm

i

A

M

J

L

D

F

B C

H

K

B

2

B

1

E

1

C

2

E

2

C

1

B

2

B

1

E

1

C

2

E

2

C

1

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

120

V

Collector-Emitter Voltage

VCEO

120

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current - Continuous

IC

50

mA

Power Dissipation (Note 1)

Pd

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RθJA

417

°C/W

Operating and Storage Temperature Range

Tj, TSTG

-55 to +150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

V(BR)CBO

120

⎯

V

IC = 50μA

Collector-Emitter Breakdown Voltage

V(BR)CEO

120

⎯

V

IC = 1.0mA

Emitter-Base Breakdown Voltage

V(BR)EBO

5.0

⎯

V

IE = 50μA

Collector Cutoff Current

ICBO

⎯

0.5

μA

VCB = 100V

Emitter Cutoff Current

IEBO

⎯

0.5

μA

VEB = 4.0V

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

180

⎯

820

⎯

IC = 2.0mA, VCE = 6.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.5

V

IC = 10mA, IB = 1.0mA

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

⎯

140

⎯

MHz

VCE = 12V, IC = 2.0mA,

f = 100MHz

Notes:

1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our

website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

DS30304 Rev. 8 - 2

1 of 3

www.diodes.com

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