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MIMD10A Datasheet(PDF) 2 Page - Diodes Incorporated

Part # MIMD10A
Description  DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT
PDF  4 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MIMD10A Datasheet(HTML) 2 Page - Diodes Incorporated

  MIMD10A Datasheet HTML 1Page - Diodes Incorporated MIMD10A Datasheet HTML 2Page - Diodes Incorporated MIMD10A Datasheet HTML 3Page - Diodes Incorporated MIMD10A Datasheet HTML 4Page - Diodes Incorporated  
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DS30381 Rev. 8 - 2
2 of 4
www.diodes.com
MIMD10A
© Diodes Incorporated
Electrical Characteristics PNP Section Tr1 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Vl(off)
-0.3
⎯
⎯
VCC = -5V, IO = -100μA
Input Voltage
Vl(on)
⎯
⎯
-1.5
V
VO = 0.3, IO = -100mA
Output Voltage
VO(on)
⎯
-0.1
-0.3
V
IO = -100mA/-5mA
Input Current
Il
⎯
⎯
-25
mA
VI = -2V
Output Current
IO(off)
⎯
⎯
-0.5
μA
VCC = -50V, VI = 0V
DC Current Gain
Gl
68
⎯
⎯
⎯
⎯
Gain-Bandwidth Product*
fT
⎯
200
⎯
MHz VCE = -10V, IE = -50mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section Tr2
@TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
50
⎯
⎯
V
IC = 50μA
Collector-Emitter Breakdown Voltage
BVCEO
50
⎯
⎯
V
IC = 1mA
Emitter-Base Breakdown Voltage
BVEBO
5
⎯
⎯
V
IE = 50μA
Collector Cutoff Current
ICBO
⎯
⎯
0.5
μA
VCB = 50V
Emitter Cutoff Current
IEBO
⎯
⎯
0.5
μA
VEB = 4V
Collector-Emitter Saturation Voltage
VCE(sat)
⎯
⎯
0.3
V
IC/IB = 10mA / 1.0mA
DC Current Transfer Ratio
hFE
100
250
600
⎯
IC = 1mA, VCE = 5V
Gain-Bandwidth Product*
fT
⎯
250
⎯
MHz
VCE = 10V, IE = -5mA, f = 100MHz
* Transistor - For Reference Only



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