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DRDPB16W Datasheet(PDF) 4 Page - Diodes Incorporated |
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DRDPB16W Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 9 page ![]() DS30573 Rev. 10 - 2 4 of 9 www.diodes.com DRD (xxxx) W © Diodes Incorporated Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Vl(off) 0.5 ⎯ ⎯ V VCC = 5V, IO = 100μA Input Voltage Vl(on) ⎯ ⎯ 3.0 V VO = 0.3V, IO = 20mA Output Voltage VO(on) ⎯ ⎯ 0.3V V IO/Il = 50mA/2.5mA Input Current Il ⎯ ⎯ 28 mA VI = 5V Output Current IO(off) ⎯ ⎯ 0.5 μA VCC = 50V, VI = 0V DC Current Gain Gl 47 ⎯ ⎯ ⎯ VO = 5V, IO = 50mA Gain-Bandwidth Product fT ⎯ 200 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Vl(off) -0.3 ⎯ ⎯ V VCC = -5V, IO = -100μA Input Voltage Vl(on) ⎯ ⎯ -2.0 V VO = -0.3V, IO = -20mA Output Voltage VO(on) ⎯ ⎯ -0.3V V IO/Il = -50mA/-2.5mA Input Current Il ⎯ ⎯ -7.2 mA VI = -5V Output Current IO(off) ⎯ ⎯ -0.5 μA VCC = -50V, VI = 0V DC Current Gain Gl 56 ⎯ ⎯ ⎯ VO = -5V, IO = -50mA Gain-Bandwidth Product fT ⎯ 200 ⎯ MHz VCE = -10V, IE = -5mA, f = 100MHz Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Vl(off) -0.5 ⎯ ⎯ V VCC = -5V, IO = -100μA Input Voltage Vl(on) ⎯ ⎯ -3.0 V VO = -0.3V, IO = -20mA Output Voltage VO(on) ⎯ ⎯ -0.3V V IO/Il = -50mA/-2.5mA Input Current Il ⎯ ⎯ -28 mA VI = -5V Output Current IO(off) ⎯ ⎯ -0.5 μA VCC = -50V, VI = 0V DC Current Gain Gl 47 ⎯ ⎯ ⎯ VO = -5V, IO = -50mA Gain-Bandwidth Product fT ⎯ 200 ⎯ MHz VCE = -10V, IE = -5mA, f = 100MHz Electrical Characteristics, Switching Diode @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 4) V(BR)R 75 ⎯ ⎯ IR = 10μA Forward Voltage VF 0.62 ⎯ ⎯ ⎯ 0.72 0.855 1.0 1.25 V IF = 5.0mA IF = 10mA IF = 100mA IF = 150mA Reverse Current (Note 4) IR ⎯ 2.5 50 30 25 μA μA μA nA VR = 75V VR = 75V, TJ = 150°C VR = 25V, TJ = 150°C VR = 20V Total Capacitance CT ⎯ 4.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ⎯ 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 4. Short duration pulse test used to minimize self-heating effect. |
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