Note: 1. *1 Measuring on substrate at 17 mm × 10 mm × 1 mm

Tr1, Tr2

(Common base, input open circuited)

Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring

methods for transistors.

Embossed type (Thermo-compression sealing) R specification : 10 000 pcs / reel

mW

°C

°C

Pin name

Unit

V

V

V

2. Base(Tr1)

5. Base(Tr2)

Collector(Tr2)

4. Emitter(Tr2)

Internal Connection

2pF

-0.2

-0.5

V

150

MHz

Collector output capacitance

Cob

VCB = -10 V, IE = 0, f = 1 MHz

Transition frequency

fT

VCE = -10 V, IC = -2 mA

Collector-emitter saturation voltage

VCE(sat) IC = -100 mA, IB = -10 mA

-100

μA

Forward current transfer ratio

hFE

VCE = -10 V, IC = -2mA

210

460

-

Collector-emitter cutoff current (Base open)

ICEO

VCE = -10 V, IB = 0

V

Collector-base cutoff current (Emitter open)

ICBO

VCB = -20 V, IE = 0

-0.1

μA

Emitter-base voltage (Collector open)

VEBO

IE = -10 μA, IC = 0

-7

V

Collector-emitter voltage (Base open)

VCEO

IC = -2 mA, IB = 0

-50

V

Collector-base voltage (Emitter open)

VCBO

IC = -10 μA, IE = 0

-60

Max

Unit

Electrical Characteristics　Ta = 25 °C ±3 °C

Parameter

Symbol

Conditions

Min

3.

Typ

Emitter-base voltage (Collector open)

VEBO

Collector current

mA

-100

-60

Collector-emitter voltage (Base open)

VCEO

-50

Packing

Semiconductor Company, Panasonic Corporation

2010.3.1

2010.9.6

Prepared

Revised

Tentative

DMA30401

Total pages

page

Tstg

DMA30401

Silicon PNP epitaxial planar type (Tr1)

For general amplification

Marking Symbol : A7

Silicon PNP epitaxial planar type (Tr2)

Tr1

Tr2

Collector-base voltage (Emitter open)

VCBO

IC

Peak collector current

ICp

-200

mA

Absolute Maximum Ratings　Ta = 25 °C

Symbol

Rating

Parameter

-55 to +150

-7

Package Code : SSSMini6-F2-B

Overall

Total power dissipation

*1

PT

125

Junction temperature

Tj

150

Storage temperature

3

4

5

6

Tr 1

Tr 2

2

1