DCP55 datasheet(1/4 Pages) DIODES

Part #	DCP55

Description	NPN SURFACE MOUNT TRANSISTOR

PDF	4 Pages

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 4 page

DCP55/-16

NPN SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary PNP Type Available (DCP52)

•

Ideally Suited for Automated Assembly Processes

•

Ideal for Medium Power Switching or Amplification Applications

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

Mechanical Data

•

Case: SOT-223

•

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020C

•

Terminals: Finish

− Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

•

Marking & Type Code Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.115 grams (approximate)

2

3

4

1

SOT-223

4

3

2

1

C

B

E

3

1

2,4

COLLECTOR

BASE

EMITTER

TOP VIEW

Schematic and Pin Configuration

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

5

V

Peak Pulse Current

ICM

1.5

A

Continuous Collector Current

IC

1

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

1 (Note 3)

Power Dissipation @ TA = 25°C

Pd

2 (Note 4)

W

Operating and Storage Temperature Range

Tj,TSTG

-55 to +150

°C

Thermal Resistance Junction to Ambient Air @ TA = 25°C (Note 3)

RθJA

125

°C/W

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Conditions

OFF CHARACTERISTICS (Note 5)

Collector-Base Breakdown Voltage

V(BR)CBO

60

⎯

V

IC = 100μA, IE = 0A

Collector-Emitter Breakdown Voltage

V(BR)CEO

60

⎯

V

IC = 10mA, IB = 0A

Emitter-Base Breakdown Voltage

V(BR)EBO

5

⎯

V

IE = 10μA, IC = 0A

Collector Cut-Off Current

ICBO

⎯

100

20

nA

μA

VCB = 30V, IE = 0A

VCB = 30V, IE = 0A, TA = 150°C

Emitter Cut-Off Current

IEBO

⎯

10

μA

VEB = 5V, IC = 0A

ON CHARACTERISTICS (Note 5)

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.5

V

IC = 500mA, IB = 50mA

Base-Emitter Turn-On Voltage

VBE(ON)

⎯

1.0

V

IC = 500mA, VCE = 2V

40

25

⎯

250

⎯

IC = 150mA, VCE = 2V

IC = 500mA, VCE = 2V

DC Current Gain

DCP55-16

hFE

100

⎯

250

⎯

IC = 150mA, VCE = 2V

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

fT

⎯

200

⎯

MHz

IC = 50mA, VCE = 5V,

f = 100MHz

Note:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB pad layout as shown on page 4 or on Diodes, Inc. suggested pad layout document AP02001, which can be found on

our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Device mounted on Polyimide PCB with a copper area of 1.8cm

2.

5. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%

DS30707 Rev. 6 - 2

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DCP55/-16

SPICE MODEL: DCP55 DCP55-16

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