DCP68 datasheet(1/4 Pages) DIODES

Part #	DCP68

Description	NPN SURFACE MOUNT TRANSISTOR

PDF	4 Pages

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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1 / 4 page

DS30797 Rev. 6 - 2

1 of 4

www.diodes.com

DCP68/-25

NPN SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

Complementary PNP Type Available (DCP69)

•

Ideally Suited for Automated Assembly Processes

•

Ideal for Medium Power Switching or Amplification Applications

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

Mechanical Data

•

Case: SOT-223

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals: Finish - Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 3

•

Ordering Information: See Page 3

•

Weight: 0.115 grams

2

3

4

1

SOT-223

3

1

2,4

COLLECTOR

BASE

EMITTER

4

3

2

1

C

B

E

TOP VIEW

Schematic and Pin Configuration

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Symbol

Value

Units

Collector-Base Voltage

VCBO

25

V

Collector-Emitter Voltage

VCEO

20

V

Emitter-Base Voltage

VEBO

5.0

V

Collector Current

IC

1.0

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation @ TA = 25ºC (Note 3)

PD

1

W

Thermal Resistance, Junction to Ambient Air @ TA = 25°C (Note 3)

RθJA

125

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to 150

°C

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 4)

Collector-Emitter Breakdown Voltage

V(BR)CES

25

—

V

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

20

—

V

IC = 1.0mA, IB = 0

Collector-Base Breakdown Voltage

V(BR)CBO

25

—

V

IC = 10μA, IE = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

5.0

—

V

IE = 10μA, IC = 0

Collector-Base Cutoff Current

ICBO

—

100

nA

VCB = 25V, IE = 0

Emitter-Base Cutoff Current

IEBO

—

10

μA

VEB = 5.0V, IC = 0

ON CHARACTERISTICS (Note 4)

DCP68, DCP68-25

50

60

—

VCE = 10V, IC = 5.0mA

VCE = 1.0V, IC = 1.0A

DCP68

85

—

375

VCE = 1.0V, IC = 500mA

DC Current Gain

DCP68-25

hFE

160

—

375

—

VCE = 1.0V, IC = 500mA

Collector-Emitter Saturation Voltage

VCE(SAT)

—

0.5

V

IC = 1.0A, IB = 100mA

Base-Emitter Turn-On Voltage

VBE (ON)

—

1.0

V

VCE = 1.0V, IC = 1.0A

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

—

330

—

MHz

IC = 100mA, VCE = 5.0V

f = 100MHz

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

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