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DXT3906 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DXT3906
Description  PNP SURFACE MOUNT TRANSISTOR
PDF  4 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DXT3906 Datasheet(HTML) 2 Page - Diodes Incorporated

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Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
-40
⎯
V
IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
⎯
V
IE = -10μA, IC = 0
ICEX
⎯
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
Collector Cutoff Current
ICBO
⎯
-50
nA
VCB = -30V, IE = 0
Base Cutoff Current
IBL
⎯
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
60
80
100
60
30
⎯
⎯
300
⎯
⎯
⎯
IC = -100μA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.65
⎯
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
⎯
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
⎯
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
k
Ω
Voltage Feedback Ratio
hre
0.1
10
x 10
-4
Small Signal Current Gain
hfe
100
400
⎯
Output Admittance
hoe
3.0
60
μS
VCE = -10V, IC = -1.0mA, f = 1.0kHz
Current Gain-Bandwidth Product
fT
250
⎯
MHz
VCE = -20V, IC = -10mA, f = 100MHz
Noise Figure
NF
⎯
4.0
dB
VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
⎯
35
ns
Rise Time
tr
⎯
35
ns
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
75
ns
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
Notes:
4.
Measured under pulsed condition. Pulse width = 300
μs. Duty cycle ≤2%.
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
A
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
-V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage
I = -2mA
B
I = -4mA
B
I = -6mA
B
I = -8mA
B
I = -10mA
B
DS31140 Rev. 4 - 2
2 of 4
www.diodes.com
DXT3906
© Diodes Incorporated



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