DXT651 datasheet(2/4 Pages) DIODES

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Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V(BR)CBO

⎯

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage

V(BR)CEO

⎯

IC = 10mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

⎯

IE = 100μA, IC = 0

Collector-Base Cutoff Current

ICBO

⎯

0.1

μA

VCB = 60V, IE = 0

VCB = 60V, IE = 0, TA = 100°C

Emitter-Base Cutoff Current

IEBO

⎯

0.1

μA

VEB = 4V, IC = 0

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

VCE(SAT)

⎯

0.08

0.23

0.3

0.6

IC = 1A, IB = 100mA

IC = 3A, IB = 300mA

Base-Emitter Saturation Voltage

VBE(SAT)

⎯

0.85

1.25

IC = 1A, IB = 100mA

Base-Emitter Turn-On Voltage

VBE(ON)

⎯

0.8

VCE = 2V, IC = 1A

DC Current Gain

hFE

100

200

185

120

⎯

300

⎯

VCE = 2V, IC = 50mA

VCE = 2V, IC = 500mA

VCE = 2V, IC = 1A

VCE = 2V, IC = 2A

AC CHARACTERISTICS

Transition Frequency

140

200

⎯

MHz

VCE = 5V, IC = 100mA, f = 100MHz

Output Capacitance

Cobo

⎯

VCB = 10V, f = 1MHz

Switching Times

ton

toff

⎯

230

⎯

VCC = 10V. IC = 500mA,

IB1 = IB2 = 50mA

Notes:

Measured under pulsed conditions. Pulse width = 300

μs. Duty cycle ≤2%.

0.2

0.4

0.6

0.8

1.0

1.2

100

125

150

175

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

, COLLECTOR EMITTER VOLTAGE (V)

Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage

I = 2mA

I = 4mA

I = 6mA

I = 8mA

I = 10mA

DS31184 Rev. 3 - 2

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