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DMN3115UDM Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN3115UDM Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DMN3115UDM Document number: DS31187 Rev. 6 - 2 1 of 4 www.diodes.com May 2010 © Diodes Incorporated DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • 60 m Ω @ V GS = 4.5V • 80 m Ω @ V GS = 2.5V • 130 m Ω @ V GS = 1.5V • Very Low Gate Threshold Voltage • Low Input Capacitance • ESD Protected Gate • Fast Switching Speed • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-26 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.015 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±8 V Drain Current (Note 1) ID 3.2 A Pulsed Drain Current (Note 1) IDM 12.8 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Total Power Dissipation (Note 1) PD 900 mW Thermal Resistance, Junction to Ambient RθJA 139 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 100μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±5 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(th) 0.5 ⎯ 1.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ 40 50 76 60 80 130 m Ω VGS = 4.5V, ID = 6A VGS = 2.5V, ID = 2A VGS = 1.5V, ID = 1.0A Forward Transfer Admittance |Yfs| ⎯ 8 ⎯ S VDS =10V, ID = 6A Diode Forward Voltage (Note 4) VSD ⎯ 0.7 1.1 V VGS = 0V, IS = 2A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 476 ⎯ pF VDS = 15V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 77 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 59 ⎯ pF Notes: 1. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads. 2. No purposefully added lead. 3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. SOT-26 Top View Top View Internal Schematic G1 S1 D3 D2 D4 D1 ESD PROTECTED |
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