DMP3056LSD

Document number: DS31420 Rev. 6 - 2

1 of 4

www.diodes.com

September 2008

© Diodes Incorporated

DMP3056LSD

DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

•

Dual P-Channel MOSFET

•

Low On-Resistance

•

45m

•

65m

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Lead Free By Design/RoHS Compliant (Note 2)

•

"Green" Device (Note 4)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SOP-8L

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020D

•

Terminals Connections: See Diagram

•

Terminals: Finish - Matte Tin annealed over Copper lead

frame. Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 4

•

Ordering Information: See Page 4

•

Weight: 0.072g (approximate)

SOP-8L

D

2

S

2

G

2

D

1

S

1

G

1

P-Channel MOSFET

P-Channel MOSFET

S1

D2

S2

D1

G2

G1

D1

D2

Internal Schematic

TOP VIEW

TOP VIEW

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Drain Current (Note 1)

Steady

State

-6.9

-5.8

A

Pulsed Drain Current (Note 3)

-24

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 1)

2.5

W

Thermal Resistance, Junction to Ambient (Note 1)

50

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

1.

Device mounted on 2 oz., 1” x 1” Copper pads on 2” x 2” FR-4 PCB.

2.

No purposefully added lead.

3.

Pulse width

≤10μS, Duty Cycle ≤1%.

4.

Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

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