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DMN3112S Datasheet(PDF) 1 Page - Diodes Incorporated |
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DMN3112S Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  DMN3112S Document number: DS31445 Rev. 2 - 2 1 of 4 www.diodes.com July 2008 © Diodes Incorporated DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance: 57m Ω @ VGS = 10V 112m Ω @ VGS = 4.5V • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • Case: SOT-23 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.008 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified SOT-23 TOP VIEW Source Gate Drain Equivalent Circuit D G S TOP VIEW Characteristic Symbol Value Unit Drain Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Note 1) TA = 25°C TA = 70°C ID 5.8 4.2 A Drain Current (Note 1) Pulsed IDM 20 A Body-Diode Continuous Current (Note 1) IS 2.0 A Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 1) PD 1.4 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) RθJA 90 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 800 nA VDS = 30V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±80 ±800 nA VGS = ±20V, VDS = 0V VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(th) 1.3 1.9 2.2 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 47 92 57 112 m Ω VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.2A Forward Transconductance |Yfs| ⎯ 4.7 ⎯ S VDS = 5V, ID = 4.2A Source-Drain Diode Forward Voltage VSD ⎯ 0.78 1.1 V VGS = 0V, IS = 2.0A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 268 ⎯ pF Output Capacitance Coss ⎯ 73 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 50 ⎯ pF VDS = 5V, VGS = 0V f = 1.0MHz Notes: 1. Device mounted on FR-4 PCB. t ≤5 sec. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Short duration pulse test used to minimize self-heating effect. Please click here to visit our online spice models database. |
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