DMN2050L

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

20

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

1

μA

Gate-Source Leakage

⎯

⎯

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.45

⎯

1.4

V

Static Drain-Source On-Resistance

⎯

24

42

68

29

50

100

m

Ω

Forward Transfer Admittance

⎯

8

⎯

S

Diode Forward Voltage (Note 5)

⎯

0.9

1.4

V

DYNAMIC CHARACTERISTICS

Input Capacitance

⎯

532

⎯

pF

Output Capacitance

⎯

144

⎯

pF

Reverse Transfer Capacitance

⎯

117

⎯

pF

f = 1.0MHz

Gate Resistance

⎯

1.3

⎯

Ω

SWITCHING CHARACTERISTICS

Total Gate Charge

⎯

6.7

⎯

Gate-Source Charge

⎯

0.8

⎯

Gate-Drain Charge

⎯

3.0

⎯

nC

Notes:

5. Short duration pulse test used to minimize self-heating effect.

0

4

8

12

16

20

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

V

= 1.5V

GS

V

= 2.0V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 10V

GS

V

= 2.5V

GS

0

4

8

12

16

20

0

0.5

1

1.5

2

2.5

3

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5V

DS

DMN2050L

Document number: DS31502 Rev. 3 - 2

2 of 5

www.diodes.com

October 2008

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