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2DB1184Q Datasheet(PDF) 1 Page - Diodes Incorporated |
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2DB1184Q Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 5 page  2DB1184Q Document number: DS31504 Rev. 3 - 2 1 of 5 www.diodes.com August 2009 © Diodes Incorporated 2DB1184Q PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Low Collector-Emitter Saturation Voltage • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: TO252-3L • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish — Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3 • Ordering Information: See Page 3 • Weight: 0.34 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -3 A Peak Pulse Collector Current ICM -4.5 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation @TA = 25°C PD 15 W Thermal Resistance, Junction to Case RθJC 8.3 °C/W Power Dissipation @TA = 25°C (Note 3) PD 1.2 W Thermal Resistance, Junction to Ambient RθJA 104 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO -60 ⎯ ⎯ V IC = -50μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -50 ⎯ ⎯ V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5 ⎯ ⎯ V IE = -50μA, IC = 0 Collector Cutoff Current ICBO ⎯ ⎯ -1 μA VCB = -40V, IE = 0 Emitter Cutoff Current IEBO ⎯ ⎯ -1 μA VEB = - 4V, IC = 0 ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage VCE(SAT) ⎯ ⎯ -1 V IC = -2A, IB = -0.2A Base-Emitter Saturation Voltage VBE(SAT) ⎯ ⎯ -1.2 V IC = -1.5A, IB = -0.15A DC Current Gain hFE 120 ⎯ 270 ⎯ VCE = -3V, IC = -0.5A SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT ⎯ 110 ⎯ MHz VCE = -5V, IC = -0.1A, f = 30MHz Output Capacitance Cobo ⎯ 26 ⎯ pF VCB = -10V, f = 1MHz Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum pad size recommended. 4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%. Top View Device Schematic Pin Out Configuration COLLECTOR BASE EMITTER 3 1 2 4 Please click here to visit our online spice models database. |
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