MJD31C

Document number: DS31625 Rev. 3 - 2

1 of 5

www.diodes.com

April 2010

© Diodes Incorporated

MJD31C

NPN SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

•

High Collector-EmitterVoltage

•

Ideally Suited for Automated Assembly Processes

•

Ideal for Power Switching or Amplification Applications

•

Lead Free By Design/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

Mechanical Data

•

Case: DPAK

•

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals: Finish — Matte Tin annealed over Copper Leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 4

•

Ordering Information: See Page 4

•

Weight: 0.34 grams (approximate)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

100

V

Collector-Emitter Voltage

100

V

Emitter-Base Voltage

5

V

Continuous Collector Current

3

A

Peak Pulse Collector Current

5

A

Continuous Base Current

1

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

15

W

Thermal Resistance, Junction to Case

8.33

°C/W

1.5

W

Thermal Resistance, Junction to Ambient

80

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Top View

Device Schematic

Pin Out Configuration

COLLECTOR

BASE

EMITTER

3

1

2

4

3

1

2,4