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2SA1013 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA1013 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente 2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor 31-Dec-2010 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 3 Base 1 Emitter Collector 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE High Voltage：VCEO= -160V Large Continuous Collector Current Capability Complementary to 2SC2383 CLASSIFICATION OF hFE Product-Rank 2SA1013-R 2SA1013-O 2SA1013-Y Range 60~120 100~200 160~320 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -160 V Collector to Emitter Voltage VCEO -160 V Emitter to Base Voltage VEBO -6 V Collector Current - Continuous IC -1 A Collector Power Dissipation PC 0.9 W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-Base Breakdown Voltage V(BR)CBO -160 - - V IC = -100µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -160 - - V IC = -1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -6 - - V IE = -10µA, IC = 0 Collector Cut-off Current ICBO - - -1 µ A VCB = -150V, IE = 0 Emitter Cut-off Current IEBO - - -1 µ A VEB = -6V, IC = 0 DC Current Gain hFE 60 - 320 VCE = -5V, IC = -200mA Collector to Emitter Saturation Voltage VCE(sat) - - -1.5 V IC = -500mA, IB = -50mA Base-Emitter Voltage VBE - - -0.75 V VCE = -5V, IC = -5mA Transition Frequency fT 15 - - MHz VCE = -5V, IC = -200mA Collector Output Capacitance COb - - 35 pF VCB = -10V, IE = 0, f = 1 MHz 1 1 1 1Emitter 2 2 2 2Collector 3 3 3 3Base A C E F D B G H J K Millimeter REF. Min. Max. A 4.70 5.10 B 7.80 8.20 C 13.80 14.20 D 3.70 4.10 E 0.35 0.55 F 0.35 0.45 G 1.27 TYP. H 1.28 1.58 J 2.44 2.64 K 0.60 0.80 TO-92L |
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