BUF12840

www.ti.com

SBOS536 – OCTOBER 2010

Programmable Gamma-Voltage Generator

with Integrated Two-Bank Memory and External EEPROM

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FEATURES

DESCRIPTION

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•

10-BIT RESOLUTION

The BUF12840 offers 12 programmable gamma

channels

with

external

electrically

erasable

•

12-CHANNEL P-GAMMA

programmable read-only memory (EEPROM) read

•

READS FROM EXTERNAL EEPROM

capabilities.

•

TWO INDEPENDENT PIN-SELECTABLE

The BUF12840 has two separate memory banks that

MEMORY BANKS

allow simultaneous storage of two different gamma

•

RAIL-TO-RAIL OUTPUT:

curves to facilitate switching between gamma curves.

–

300mV Min Swing-to-Rail (10mA)

All gamma channels offer a rail-to-rail output that

–

200mV Min Swing-to-Rail (5mA)

typically swings to within 200mV of either supply rail

•

LOW SUPPLY CURRENT

with a 5mA load. All channels are programmed using

a two-wire interface that supports standard operations

•

SUPPLY VOLTAGE: 9V to 20V

up to 400kHz and high-speed data transfers up to

•

DIGITAL SUPPLY: 2V to 5.5V

3.4MHz.

•

TWO-WIRE INTERFACE: Supports 400kHz and

The

BUF12840

is

manufactured

using

Texas

3.4MHz Operation

Instruments’ proprietary, state-of-the-art, high-voltage

CMOS process. This process offers very dense logic

APPLICATIONS

and high supply voltage operation of up to 20V. The

•

TFT-LCD REFERENCE DRIVERS

BUF12840 is offered in a QFN-24 package, and is

specified from –40°C to +95°C.

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Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date.

Copyright © 2010, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.