ISO1176T

SLLSE28C

– OCTOBER 2010 – REVISED FEBRUARY 2011

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1)

VALUE

UNIT

–0.5 to 7

V

Voltage at any bus I/O terminal

–9 to 14

V

Voltage at D1, D2

14

V

Voltage input at D, DE or RE terminal

–0.5 to 7

V

Receiver output current

±10

mA

Transformer Driver Output Current

450

mA

Bus pins to GND1

±6

JEDEC Standard 22, Test Method

Human Body Model

Bus pins to GND2

±10

kV

A114-C.01

Electrostatic

ESD

all pins

±4

Discharge

Charged Device Model

JEDEC Standard 22, Test Method C101

±1.5

kV

all pins

Machine Model

ANSI/ESDS5.2-1996

±200

V

Maximum junction temperature

170

°C

Storage temperature

-65 to 150

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to the referenced network ground terminal and are peak voltage

values.

RECOMMENDED OPERATING CONDITIONS

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

3

5.5

V

4.75

5.25

Voltage at either bus I/O terminal

A, B

–7

12

V

RE

2

V

High-level input voltage

D, DE

RE

0

0.8

V

Low-level input voltage

D, DE

Differential input voltage

A with respect to B

–12

12

V

RS-485 driver

–70

70

mA

Output Current

Receiver

–8

8

Ambient temperature

-40

85

°C

Operating junction temperature

150

°C

Signaling Rate

40

Mbps

2

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