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BAW101V Datasheet(PDF) 1 Page - Diodes Incorporated |
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BAW101V Datasheet(HTML) 1 Page - Diodes Incorporated |
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1 / 4 page  BAW101V Document number: DS32178 Rev. 4 - 2 1 of 4 www.diodes.com September 2010 © Diodes Incorporated BAW101V HIGH VOLTAGE DUAL SWITCHING DIODE Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature • Thermally Efficient Copper Alloy leadframe for High Power Dissipation • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3) • "Green" Device (Note 4) Mechanical Data • Case: SOT-563 • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.006 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Repetitive Peak Reverse Voltage Single Diode VRRM 325 650 V Series Connection Working Peak Reverse Voltage DC Blocking Voltage Single Diode VRWM VR 325 650 V Series Connection RMS Reverse Voltage VR(RMS) 230 V Forward Current (Note 2) Single Diode Loaded IF 250 140 mA Double Diode Loaded Non-Repetitive Peak Forward Surge Current @ t = 1.0 μs IFSM 8.0 A Repetitive Peak Forward Current @ t = 8.3ms (Note 2) IFRM 3.0 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 2) PD 500 mW Thermal Resistance Junction to Ambient Air (Note 2) RθJA 250 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 1) V(BR)R 300 ⎯ V IR = 100μA Forward Voltage VF ⎯ 1.1 V IF = 100mA Reverse Current (Note 1) IR ⎯ ⎯ ⎯ 50 150 50 nA nA μA VR = 5V VR = 250V VR = 250V, TJ = 150°C Total Capacitance CT ⎯ 2.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ⎯ 50 ns IF = IR = 30mA, Irr = 0.1 x IR, RL = 100Ω Notes: 1. Short duration pulse test used to minimize self-heating effect. 2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added lead. Halogen and Antimony Free. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Top View Bottom View Device Schematic 12 3 65 4 |
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