BC856AW datasheet(2/4 Pages) PANJIT

2 / 4 page

PAGE . 2

December 17,2010-REV.00

BC856AW ~ BC859CW

ELECTRICAL CHARACTERISTICS (T

J=25

OC, unless otherwise noted)

PA RA M E TE R

S ym b o l

M IN.

TYP.

M A X .

Uni t s

C o lle c t or - E m i t t e r B r eak down Vo lt a g e

C = - 10m A , IB =0 )

B C 856AW,B W

B C 857AW / B W /C W,

B C 858AW / B W /C W, B C 859B W / C W

(B R ) CE O

-65

-45

-30

C o lle c t or - B a s e B r eakdown Vo lt age

C =- 1 0 μ A, IE =0 )

B C 856AW,B W

B C 857AW / B W /C W,

B C 858AW / B W /C W, B C 859B W / C W

(B R ) CB O

-80

-50

-30

E m i tt e r - B a s e B r eakdo w n Vo lt age

E =- 1 u A , IC =0 )

(B R ) EBO

- 5 .0

E m i tte r - B a s e C uto ff C ur r e nt

EB =- 5 V )

EB O

- 100

C o lle c t or - B as e C uto f f C ur r ent

CB = - 30V , IE =0 )

J =2 5

J = 150

CB O

-1 5

-4 .0

μA

DC Cur r e nt G a in

C =- 1 0 μ A, V CE =- 5 V )

B C 856~ B C 858 S uff i x " AW "

B C 856~ B C 859 S uff i x " B W "

B C 857~ B C 859 S uff i x " C W "

150

270

DC Cur r e nt G a in

C = - 2. 0m A , V CE =- 5 V )

B C 856~ B C 858 S uff i x " AW "

B C 856~ B C 859 S uff i x " B W "

B C 857~ B C 859 S uff i x " C W "

11 0

200

420

180

290

520

220

450

800

C o lle c t or - E m i t t e r S a tur a t i on Vo ltage

C = - 10m A , IB = - 0. 5m A )

C = - 100m A , IB = - 5. 0m A )

CE (S AT)

-0 .3

-0 .6 5

B a s e - E m i tte r S a tura ti o n Vo lt a g e

C = - 10m A , IB = - 0. 5m A )

C = - 100m A , IB = - 5. 0m A )

BE (S AT)

-0 .7

-0 .9

B a s e - E m i tt e r Vo ltage

C =- 2 m A , V CE = - 5. 0V )

C = - 10m A , V CE = - 5. 0V )

BE ( ON )

-0 .6 0

-0 .7 5

-0 .8 2

C o lle c t or - B a s e C apac i tance

( V

CB = - 10V , IE = 0 , f= 1 M H Z)C CB

4 .5

p F

C ur r e nt- Gai n- B a nd wi dth P r oduc t

C = - 10m A , V CE = - 5. 0V , f = 100M H Z)

200

M H

THERMAL CHARACTERISTICS

Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.

PARAMETER

SYMBOL

Value

UNIT

Thermal Resistance

RθJA

RθJC

400

100

OC/W

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