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LB1854 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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LB1854 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 6 page ![]() No. 4476-2/6 LB1854M Electrical Characteristics at Ta = 25°C, VCC1 = 12 V, VCC2 = 5 V Note: * Items marked with an asterisk are design target values and are not measured. Parameter Symbol Conditions min typ max Unit Current drain ICC1 VC = 0 V, RL = ∞ 17 30 mA ICC2 VC = 0 V 6.5 9.5 mA [Drive Block] Output saturation voltage VO (sat) 1 IOUT = 0.5 A, sink + source 1.6 2.2 V VO (sat) 2 IOUT = 1.0 A, sink + source 2.0 3.0 V Output TRS breakdown voltage VO (sus) IOUT = 20 mA* 20 V Output resting potential VOQ VC = 0 V 5.7 6.0 6.3 V Hall amplifier input offset voltage VH offset –5 +5 mV Hall amplifier input bias current IH bias 1 5 µA Hall amplifier common mode V H ch 1.3 2.2 V input voltage range Hall input/output voltage gain GVHO 43 46 49 dB [Control Block] Control output drive gain GVCO1 High gain 37 40 43 dB GVCO2 Low gain 31 34 37 dB Control output CH difference ∆GVCO –2 +2 dB Control start voltage VCTH When VOUTp-p = 2 V 2.5 V Gain control switching high level 4 5 V Gain control switching Middle level when the input is open 2 3 V middle level Gain control switching low level 0 1 V [FG Amplifier] FG amplifier input offset voltage VFG offset –8 +8 mV Open-loop voltage gain GVFG f = 1 kHz 60 dB Source output saturation voltage VFG OU IO = 2 mA 37 V Sink output saturation voltage VFG OD IO = –2 mA 1.3 V Common-mode signal CHR * 80 dB rejection ratio FG amplifier common-mode V FG CH 0 3.5 V input voltage range Phase margin * 20 Deg Schmitt hysteresis ∆Vsh1 FGOUT2: High to low 22 mV ∆Vsh2 FGOUT2: Low to high 22 mV Schmitt input voltage range VshCH 0.7 3.5 V [Thermal Shutdown] Operating temperature TSD * 150 180 210 °C Hysteresis ∆TSD * 15 °C |
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