FCX591 datasheet(1/1 Pages) DIODES

Part #	FCX591

Description	SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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Manufacturer	DIODES [Diodes Incorporated]

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SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 - OCTOBER 1995

7

FEATURES

*

60 Volt V

CEO

*

1 Amp continuous current

*P

tot= 1 Watt

COMPLEMENTARY TYPE –

FCX591

PARTMARKING DETAIL –

N1

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

80

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

5V

Continuous Collector Current

IC

1A

Peak Pulse Current

ICM

2A

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Breakdown Voltages

V(BR)CBO

80

V

IC=100µA

VCEO(sus)

60

V

IC=10mA*

V(BR)EBO

5V

IE=100µA

Collector Cut-Off Currents

ICBO

100

nA

VCB=60V,

ICES

100

nA

VCE=60V

Emitter Cut-Off Current

IEBO

100

nA

VEB=4V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.25

0.50

V

IC=500mA, IB=50mA*

IC=1A, IB=100mA*

Base-Emitter

Saturation Voltage

VBE(sat)

1.1

V

IC=1A, IB=100mA*

Base-Emitter

Turn On Voltage

VBE(on)

1.0

V

IC=1A, VCE=5V*

Static Forward Current

Transfer Ratio

hFE

100

80

30

300

IC=1mA, VCE=5V

IC=500mA, VCE=5V*

IC=1A, VCE=5V*

IC=2A, VCE=5V*

Transition Frequency

fT

150

MHz

IC=50mA, VCE=10V

f=100MHz

Collector-Base

Breakdown Voltage

Cobo

10

pF

VCB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

For typical Characteristics graphs see FMMT491 datasheet

FCX491

C

B

E

3 - 86

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