FCX495 datasheet(1/6 Pages) DIODES

Part #	FCX495

Description	SOT89 NPN silicon planar high voltage transistor

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Manufacturer	DIODES [Diodes Incorporated]

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Issue 4 - May 2007

1

www.zetex.com

FCX495

SOT89 NPN silicon planar high voltage transistor

Features

•

150 Volt VCEO

•

1 Amp continuous current

Device marking

N95

Absolute maximum ratings

Electrical characteristics (at Tamb = 25°C)

Parameter

Symbol

Value

Unit

Collector-base voltage

VCBO

170

V

Collector-emitter voltage

VCEO

150

V

Emitter-base voltage

VEBO

5

V

Continuous collector current

I

C

1

A

Peak pulse current

I

CM

2

A

Base current

IB

200

mA

Power dissipation at Tamb = 25°C

Ptot

1

W

Operating and storage temperature range

Tj:Tstg

-65 to +150

°C

Parameter

Symbol

Min.

Max.

Unit

Conditions

Breakdown voltages

V(BR)CBO

170

V

IC=100µA

VCEO(sus)

150

V

IC=10mA (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle

2%

V(BR)EBO

5

V

IE=100µA

Collector cut-off currents

ICBO, ICES

100

nA

VCB=150V, VCE=150V

Emitter cut-off current

IEBO

100

nA

VEB=4V

Emitter saturation voltages

VCE(sat)

0.2

V

IC=250mA, IB=25mA(*)

0.3

V

IC=500mA, IB=50mA(*)

VBE(sat)

1.0

V

IC=500mA, IB=50mA(*)

Base-emitter turn on voltage

VBE(on)

1.0

V

IC=500mA, VCE=10V(*)

Static forward current transfer

ratio

hFE

100

300

IC=1mA, VCE=10V

100

IC=250mA, VCE=10V(*)

50

IC=500mA, VCE=10V(*)

10

IC=1A, VCE=10V(*)

Transition frequency

fT

100

MHz

IC=50mA, VCE=10V

f=100MHz

Collector-base breakdown voltage

Cobo

10

pF

VCB=10V, f=1MHz

C

E

Pinout - top view

C

B

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