P89 datasheet(1/1 Pages) DIODES

Part #	P89

Description	SOT89 PNP SILICON PLANAR MEDIUM

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Manufacturer	DIODES [Diodes Incorporated]

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SOT89 PNP SILICON PLANAR MEDIUM

POWER HIGH PERFORMANCE TRANSISTOR

ISSUE 3 - OCTOBER 1995

7

PARTMARKING DETAIL –

P89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5

V

Peak Pulse Current

ICM

-2

A

Continuous Collector Current

IC

-1

A

Base Current

IB

-200

mA

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).

PARAMETER

SYMBOL MIN.

MAX.

UNIT

CONDITIONS.

Breakdown Voltages

V(BR)CBO

-50

V

IC=-100µA

V(BR)CEO

-30

V

IC=-10mA*

V(BR)EBO

-5

V

IE=-100µA

Collector Cut-Off Current

ICBO

-100

nA

VCB=-30V

Collector -Emitter Cut-Off

Current

ICES

-100

nA

VCES=-30V

Emitter Cut-Off Current

IEBO

-100

nA

VEB=-4V

Collector-Emitter

Saturation Voltage

VCE(sat)

-0.35

-0.65

VIC=-1A, IB=-100mA*

IC=-2A, IB=-200mA*

Base-Emitter

Saturation Voltage

VBE(sat)

-1.2

V

IC=-1A, IB=-100mA*

Base-Emitter

Turn-on Voltage

VBE(on)

-1.1

V

IC=-1A, VCE=-2V*

Static Forward Current Transfer

Ratio

hFE

100

80

40

300

IC=-1mA, VCE=-2V*

IC=-500mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-2A, VCE=-2V*

Transition Frequency

fT

100

MHz

IC=-100mA, VCE=-5V

f=100MHz

Output Capacitance

Cobo

15

pF

VCB=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

For typical Characteristics graphs see FMMT549 datasheet

FCX589

C

B

C

E

3 - 91

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