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FCX619 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # FCX619
Description  SOT89 NPN SILICON POWER
PDF  3 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FCX619 Datasheet(HTML) 2 Page - Diodes Incorporated

  FCX619 Datasheet HTML 1Page - Diodes Incorporated FCX619 Datasheet HTML 2Page - Diodes Incorporated FCX619 Datasheet HTML 3Page - Diodes Incorporated  
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
50
190
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
50
65
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
58.3
V
IE=100µA
Collector Cut-Off
Current
ICBO
100
nA
VCB=40V
Emitter Cut-Off Current IEBO
100
nA
VEB=4V
Collector Emitter
Cut-Off Current
ICES
100
nA
VCES=40V
Collector-Emitter
Saturation Voltage
VCE(SAT)
13
150
190
240
25
220
260
320
mV
mV
mV
mV
IC=0.1A, IB=10mA*
I
C=1A, IB=10mA*
IC=2A, IB=50mA*
IC=2.75A,IB=100mA*
Base-Emitter
Saturation Voltage
VBE(SAT)
0.97
1.1
V
IC=2.75A,
IB=100mA*
Base-Emitter Turn-On
Voltage
VBE(ON)
0.89
1.0
V
IC=2.75A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
200
300
200
100
400
450
400
200
30
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
Transition
Frequency
fT
100
165
MHz
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
COBO
12
20
pF
VCB=10V, f=1MHz
Turn-On Time
t(ON)
170
ns
VCC=10V, IC=1A
IB1=-IB2=10mA
Turn-Off Time
t(OFF)
750
ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FCX619



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