SOT89 PNP SILICON POWER

(SWITCHING) TRANSISTOR

ISSSUE 1 - MAY 1999

FEATURES

*

2W POWER DISSIPATION

*

10A Peak Pulse Current

*

Excellent H

*

Extremely Low Saturation Voltage E.g. 12mv Typ.

*

Extremely Low Equivalent On-resistance;

R

at 3A

Partmarking Detail -

717

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

-12

V

Collector-Emitter Voltage

V

CEO

-12

V

Emitter-Base Voltage

V

EBO

-5

V

Peak Pulse Current **

I

CM

-10

A

Continuous Collector Current

I

C

-3

A

Base Current

I

B

-500

mA

Power Dissipation at T

P

tot

1†

2‡

W

W

Operating and Storage Temperature Range

T

-55 to +150

°C

†

‡

Maximum power dissipation is calculated assuming that the device is mounted on FR4

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300

µs. Duty cycle  2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions for soldering surface mount components.

FCX717