SOT23 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 - NOVEMBER 1995

7

COMPLEMENTARY TYPE –

FMMT593

PARTMARKING DETAIL –

493

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

120

V

Collector-Emitter Voltage

100

V

Emitter-Base Voltage

5V

Continuous Collector Current

1A

Peak Pulse Current

2A

Base Current

200

mA

500

mW

Operating and Storage Temperature Range

-55 to +150

°C

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Breakdown Voltages

120

V

100

V

5V

Collector Cut-Off Current

100

nA

Collector Cut-Off Current

100

nA

Emitter Cut-Off Current

100

nA

Saturation Voltages

0.3

0.6

V

V

1.15

V

Base-Emitter

Turn On Voltage

1.0

V

Static Forward Current

Transfer Ratio

100

100

60

20

300

Transition Frequency

150

MHz

f=100MHz

Collector-Base

Breakdown Voltage

10

pF

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

FMMT493

C

B

E

SOT23

FMMT493

3 - 120

3 - 119

C

E

(s

at

)

10A

1A

10mA

100mA

1mA

-55 ° C

+25 ° C

+100 ° C

B

E

(s

at

)

0

0.2

100mA

10mA

0.4

0.6

0.8

1.0

10A

1A

1mA

100mA

10mA

10A

1A

FE

40

0

120

80

160

10mA

1mA

100mA

1A

10A

B

E(

on

)

0.6

0.8

1.0

0.4

0.2

0

C

E

(s

at

)

1mA

0

0.1

100mA

10mA

+25 ° C

0.2

0.3

0.4

10A

1A

0.4

+100 °C

-55 ° C

+25 °C

+100 ° C

-55 ° C

+25 ° C

-55 ° C

+25 ° C

+100 ° C

C

10

1

0.1

Safe Operating Area

0.1

10

100

1s

DC

100ms

10ms

100µs

1ms

1

0

0.1

0.3

0.2

1mA

0.01

200

240

280

0.001

TYPICAL CHARACTERISTICS