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FZT558 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # FZT558
Description  SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
PDF  2 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FZT558 Datasheet(HTML) 2 Page - Diodes Incorporated

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SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH VOLTAGE TRANSISTOR
ISSUE 2 – DECEMBER 1995
FEATURES
* 400 Volt VCEO
* 200mA continuous current
*Ptot= 2 Watt
PARTMARKING DETAIL -
FZT558
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-200
mA
Power Dissipation
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-400
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
VBR(CEO)
-400
V
IC=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
V
IE=-100µA
Collector Cut-Off Current ICBO
-100
nA
VCB=-320V
Collector Cut-Off Current ICES
-100
nA
VCE=-320V
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.2
-0.5
V
V
IC=-20mA, IB=-2mA*
IC=-50mA, IB=-6mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
V
IC=-50mA, IB=-5mA*
Base-Emitter
Turn On Voltage
VBE(on)
-0.9
V
IC=-50mA, VCE=-10V*
Static Forward Current
Transfer Ratio
hFE
100
100
15
300
IC=-1mA, VCE=-10V
IC=-50mA, VCE=-10V*
IC=-100mA, VCE=-10V*
Transition
Frequency
fT
50
MHz
IC=-10mA, VCE=-20V
f=20MHz
Collector-Base
Breakdown Voltage
Cobo
5pF
VCB=-20V, f=1MHz
Switching times
ton
toff
95
1600
ns
ns
IC=-50mA, VC=-100V
IB1=5mA, IB2=-10mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT558
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01
0.1
20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I+ -
Collector Current (Amps)
VCE(sat) v IC
I+ -
Collector Current (Amps)
-55°C
+25°C
+100°C
+175°C
I+ -
Collector Current (Amps)
I+ -
Collector Current (Amps)
hFE v IC
VBE(sat) v IC
I+ -
Collector Current (Amps)
VBE(on) v IC
IC/IB=10
IC/IB=50
IC/IB=10
IC/IB=10
VCE=10V
VCE=10V
300
200
100
0.001
0.001
0.001
0.001
0.001
IC/IB=20
-55°C
+25°C
+100°C
+175°C
FZT558
C
C
E
B
3 - 193
3 - 192



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