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FZT653 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # FZT653
Description  SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
PDF  2 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FZT653 Datasheet(HTML) 2 Page - Diodes Incorporated

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SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3– FEBRUARY 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE –
FZT753
PARTMARKING DETAIL –
FZT653
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
120
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM
6A
Continuous Collector Current
IC
2A
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
120
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
100
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
5V
IE=100µA
Collector Cut-Off Current ICBO
0.1
10
µ
A
µ
A
VCB=100V
VCB=100V,Tamb=100°C
Emitter Cut-Off Current
IEBO
0.1
µ
A
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.13
0.23
0.3
0.5
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
1.25
V
IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.8
1.0
V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
70
100
55
25
200
200
110
55
300
IC=50mA, VCE=2V*
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
Transition Frequency
fT
140
175
MHz
IC=100mA, VCE=5V
f=100MHz
Output Capacitance
Cobo
30
pF
VCB=10V, f=1MHz
Switching Times
ton
80
ns
IC=500mA, VCC=10V
IB1=IB2=50mA
toff
1200
ns
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT653
FZT653
C
C
E
B
3 - 210
3 - 209
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC -
Collector Current (Amps)
Single Pulse Test at Tamb=25°C
0.01
0.1
10
1
IC -
Collector Current (Amps)
VBE(sat) v IC
IC -
Collector Current (Amps)
hFE v IC
0.01
10
0.1
1
VCE=2V
0.6
0.8
1.0
1.2
IC -
Collector Current (Amps)
VBE(on) v IC
Switching Speeds
IC -
Collector Current (Amps)
0.1
1
IB1=IB2=IC/10
0.01
ts
tf
td
tr
ts
ns
125
175
225
75
0.6
0.8
1.0
1.2
0.4
0
0.1
0.2
0.4
0.5
0.3
0.6
0.001
0.0001
IC/IB=10
1.4
0.01
10
0.1
1
0.0001 0.001
IC/IB=10
0.01
10
0.1
1
0.0001 0.001
VCE=2V
0
td
tr
tf
ns
200
240
80
40
120
160
280
0
2000
2400
800
400
1200
1600
2800
25
0.1
100
1s
100ms
10
DC
0.01
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
300µs
110
0.1
1



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